Spatial description theory of narrow-band single-carrier avalanche photodetectors
نویسندگان
چکیده
منابع مشابه
AlN avalanche photodetectors
Deep ultraviolet DUV avalanche photodetectors APDs based on an AlN /n-SiC Schottky diode structure have been demonstrated. The device with a mesa diameter of 100 m exhibits a gain of 1200 at a reverse bias voltage of −250 V or a field of about 3 MV /cm. The cut-off and peak responsivity wavelengths of these APDs were 210 and 200 nm, respectively. This is the highest optical gain and shortest cu...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2021
ISSN: 1094-4087
DOI: 10.1364/oe.418110